Enhanced light extraction from Y2O3:Eu3+ phosphor films via vacuum nano-imprint lithography using spin-on dielectric materials
- Authors
- Lee, Kilbock; Ko, Ki-Young; Ahn, Jinho
- Issue Date
- Nov-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Spin-on dielectric; Nano-imprint lithography; Light extraction efficiency; Y2O3:Eu3+ thin-film phosphor
- Citation
- THIN SOLID FILMS, v.547, pp.222 - 224
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 547
- Start Page
- 222
- End Page
- 224
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161607
- DOI
- 10.1016/j.tsf.2013.02.079
- ISSN
- 0040-6090
- Abstract
- This paper reports a simple process to enhance the extraction efficiency of photoluminescence from Eu-doped yttrium oxide (Y2O3:Eu3+) thin-film phosphor. The two-dimensional (2D) SiO2 photonic crystal layer was fabricated by vacuum nano-imprint method using a conventional spin-on dielectric solution as a nano-imprint resin and a 2D patterned Si stamp. The applied pressure and temperature of the patterning and annealing process facilitates the conversion of the spin-on dielectric solution into a SiO2 hemisphere structure resulting in high definition transfer of the 2D reverse pattern of the Si mold. The light extraction efficiency of the Y2O3:Eu3+ thin-film phosphor assisted by 2D SiO2 photonic crystal layer was approximately 1.72 times higher than that of the conventional Y2O3:Eu3+ thin-film phosphor.
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