Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2-ZnS core-shell quantum dots embedded in a poly(methylmethacrylate) layer
- Authors
- Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook
- Issue Date
- Oct-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Organic bistable memory devices; CuInS2 quantum dot; PMMA; CuInS2-ZnS core-shell quantum dot
- Citation
- THIN SOLID FILMS, v.544, pp.433 - 436
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 544
- Start Page
- 433
- End Page
- 436
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161812
- DOI
- 10.1016/j.tsf.2013.02.086
- ISSN
- 0040-6090
- Abstract
- The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS2 (CIS) core or CIS-ZnS core-shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium-tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS-ZnS QDs. Current-voltage measurements on Al/CIS or CIS-ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS-ZnS QDs were approximately 1 x 10(3) and 1 x 10(5), respectively. The retention number of ON and OFF states was measured by 1 x 10(5). The memory mechanisms of the OBDs with CIS or CIS-ZnS QDs are described on the basis of the experimental results.
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