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Thin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors

Authors
An, Tae KyuPark, So-MinNam, SoojiHwang, JaeyeongYoo, Seung-JinLee, Min-JungYun, Won MinJang, JaeyoungCha, HyojungHwang, JihunPark, SeonukKim, JiyeChung, Dae SungKim, Yun-HiKwon, Soon-KiPark, Chan Eon
Issue Date
Sep-2013
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Organic Thin Film Transistor (OTFT); Mixed Solvent; Organic Semiconductor; Morphology; Fused Acene; Crystallinity
Citation
Science of Advanced Materials, v.5, no.9, pp.1323 - 1327
Indexed
SCIE
SCOPUS
Journal Title
Science of Advanced Materials
Volume
5
Number
9
Start Page
1323
End Page
1327
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161923
DOI
10.1166/sam.2013.1566
ISSN
1947-2935
Abstract
The electrical performance of a thin film in an organic thin film transistor depends on the film morphology. A mixed solvent system was demonstrated to provide a useful method for controlling the morphologies of organic semiconductor layers in organic thin film transistor. To overcome the limitations on solvent properties, control over the morphology of a 2-(6-((2-ethylhexyl)oxy)naphthalen-2-yl)anthracene film using a tetrahydrofuran/chloroform mixed system (with ratio of 1:5 w/w). Here, in an effort to achieve improved the device electrical performance properties for use in organic thin film transistors, we have examined a mixed solvent system that is suitable for the fabrication of organic semiconductors.
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