Stochastic Patterning Simulation Using Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Seongchul | - |
dc.contributor.author | Jeong, Seejun | - |
dc.contributor.author | Lee, Jae Uk | - |
dc.contributor.author | Lee, Seung Min | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-07-16T08:30:37Z | - |
dc.date.available | 2022-07-16T08:30:37Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162074 | - |
dc.description.abstract | In extreme ultraviolet lithography, the photon shot noise effect is a main cause of low-quality imaging characteristics such as line edge roughness and critical dimension (CD) nonuniformity. In this study, the stochastic imaging property of an attenuated phase-shift mask (PSM) was evaluated, and the results showed that "informative" photons from the first order diffraction are essential for mitigating the photon shot noise effect. This structure exhibits a reflectivity of similar to 6% at the absorber stack and a phase shift of 180 degrees at 13.5 nm wavelength. The improved stochastic patterning properties of the PSM were compared with those of a conventional binary intensity mask. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Stochastic Patterning Simulation Using Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.7567/APEX.6.096501 | - |
dc.identifier.scopusid | 2-s2.0-84883691225 | - |
dc.identifier.wosid | 000324494100033 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.6, no.9, pp.1 - 5 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EUV WAVELENGTHS | - |
dc.subject.keywordPlus | ARF LITHOGRAPHY | - |
dc.subject.keywordPlus | PRINTABILITY | - |
dc.subject.keywordPlus | FLARE | - |
dc.subject.keywordPlus | ANGLE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/APEX.6.096501 | - |
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