Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films
- Authors
- Ahn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun
- Issue Date
- Jul-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.103, no.4, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 103
- Number
- 4
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeong, Doo Seok
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)