Bidirectional Two-Terminal Switching Device with Metal-Semiconductor-Semiconductor Structures for 4F(2) Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell
- Authors
- Kil, Gyu-Hyun; Song, Yun-Heub
- Issue Date
- Jul-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 7
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162409
- DOI
- 10.7567/JJAP.52.071801
- ISSN
- 0021-4922
- Abstract
- We proposed a novel bidirectional two-terminal selective device for realizing a 4F(2) cell size for spin-transfer-torque magnetoresistance random access memory (STT-MRAM). The proposed switching device is composed of a Schottky-barrier contact and a PN junction with a metal-semiconductor-semiconductor (M/S/S) structure. The proposed M/S/S switching device provides a current density of over 10(6) A/cm(2), which is sufficient to write the magnetic tunnel junction (MTJ), and a bilateral current flow using a punch through with an extended depletion region at a junction. Furthermore, we investigated its switching characteristics by comparing parameters such as doping profile and junction length. From this work, it is expected that an M/S/S structure will be a promising switching device for STT MRAM.
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