Interband tansition and electronic structures in strained In (x) Ga1-x N/GaN multiple quantum well
DC Field | Value | Language |
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dc.contributor.author | Kim, Dong-Hyung | - |
dc.contributor.author | Kim, Tae-Won | - |
dc.contributor.author | Lee, Hong Seok | - |
dc.contributor.author | Lee, Jin-hong | - |
dc.contributor.author | Ahn, Su Chang | - |
dc.contributor.author | Yoo, Keon-Ho | - |
dc.date.accessioned | 2022-07-16T09:40:43Z | - |
dc.date.available | 2022-07-16T09:40:43Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162660 | - |
dc.description.abstract | In (x) Ga1-x N/GaN multiple quantum wells (MQWs), composed of 28- In0.29Ga0.71N wells and 24- In0.23Ga0.77N wells, were grown by using metal-organic chemical vapor deposition. Temperaturedependent photoluminescence (PL) spectra showed that the energies of the two dominant peaks in the In (x) Ga1-x N/GaN MQWs decreased with increasing temperature. The electronic subband energies and the wavefunctions in the In (x) Ga1-x N/GaN MQWs were calculated by solving the Schrodinger equation in the 8-band envelope function approximation. The effects of the spontaneous polarization, strain and piezoelectric polarizations on the electronic structures of the In (x) Ga1-x N/GaN MQWs were examined to explain the PL data. The calculated interband transition energies from the ground electronic subbands to the ground hole subbands in In (x) Ga1-x N/GaN MQWs were in reasonable agreement with those obtained from the PL spectra. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Interband tansition and electronic structures in strained In (x) Ga1-x N/GaN multiple quantum well | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Won | - |
dc.identifier.doi | 10.3938/jkps.62.1668 | - |
dc.identifier.scopusid | 2-s2.0-84879241379 | - |
dc.identifier.wosid | 000320671900014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1668 - 1671 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 62 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1668 | - |
dc.citation.endPage | 1671 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001819757 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | WURTZITE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | InxGa1-xN/GaN multiple quantum well | - |
dc.subject.keywordAuthor | Polarization effect | - |
dc.subject.keywordAuthor | Electronic structure | - |
dc.subject.keywordAuthor | and Interband transition | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.62.1668 | - |
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