Interband tansition and electronic structures in strained In (x) Ga1-x N/GaN multiple quantum well
- Authors
- Kim, Dong-Hyung; Kim, Tae-Won; Lee, Hong Seok; Lee, Jin-hong; Ahn, Su Chang; Yoo, Keon-Ho
- Issue Date
- Jun-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- InxGa1-xN/GaN multiple quantum well; Polarization effect; Electronic structure; and Interband transition
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1668 - 1671
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 62
- Number
- 11
- Start Page
- 1668
- End Page
- 1671
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162660
- DOI
- 10.3938/jkps.62.1668
- ISSN
- 0374-4884
- Abstract
- In (x) Ga1-x N/GaN multiple quantum wells (MQWs), composed of 28- In0.29Ga0.71N wells and 24- In0.23Ga0.77N wells, were grown by using metal-organic chemical vapor deposition. Temperaturedependent photoluminescence (PL) spectra showed that the energies of the two dominant peaks in the In (x) Ga1-x N/GaN MQWs decreased with increasing temperature. The electronic subband energies and the wavefunctions in the In (x) Ga1-x N/GaN MQWs were calculated by solving the Schrodinger equation in the 8-band envelope function approximation. The effects of the spontaneous polarization, strain and piezoelectric polarizations on the electronic structures of the In (x) Ga1-x N/GaN MQWs were examined to explain the PL data. The calculated interband transition energies from the ground electronic subbands to the ground hole subbands in In (x) Ga1-x N/GaN MQWs were in reasonable agreement with those obtained from the PL spectra.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.