Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence
- Authors
- Yang, Changjae; Lee, Sangsoo; Shin, Keun-Wook; Oh, Sewoung; Moon, Daeyoung; Kim, Sung-Dae; Kim, Young-Woon; Kim, Chang-Zoo; Park, Won-kyu; Choi, Won Jun; Park, Jinsub; Yoon, Euijoon
- Issue Date
- May-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Cathodoluminescence; Photoluminescence; GaInP; Ge; Deep levels
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.370, pp.168 - 172
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 370
- Start Page
- 168
- End Page
- 172
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162851
- DOI
- 10.1016/j.jcrysgro.2012.09.012
- ISSN
- 0022-0248
- Abstract
- We investigated the deep level photoluminescence and cathodoluminescence emissions from GaInP grown on Ge and Ge-on-Si substrates by metal-organic chemical vapor deposition. Considering the interface condition after the growth of GaInP on Ge, we speculated that the P vacancies and/or Ge atoms from the underlying layer due to interdiffusion were responsible for the deep level emissions. Moreover, the anti-phase boundaries in GaInP, incompletely suppressed even when grown on off-axis Ge substrates, were also responsible for the deep level emissions.
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