Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
DC Field | Value | Language |
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dc.contributor.author | Seung, HyunMin | - |
dc.contributor.author | Lee, Jong-Dae | - |
dc.contributor.author | Kim, Chang-Hwan | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T10:11:07Z | - |
dc.date.available | 2022-07-16T10:11:07Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162889 | - |
dc.description.abstract | In summary, we successfully fabricated the nonvolatile hybrid polymer 4F(2) memory-cell. It was based on bistable state, which was observed in PS layer that is containing a Ni nanocrystals capped with NiO tunneling barrier sandwiched by Al electrodes. The current conduction mechanism for polymer memory-cell was demonstrated by fitting the I-V curves. The electrons were charged and discharged on Ni nanocrystals by tunneling through the NiO tunneling barrier. In addition, the memory-cell showed a good and reproducible nonvolatile memory-cell characteristic. Its memory margin is about 1.4 x 10. The retention-time is more than 10(5) seconds and the endurance cycles of program-and-erase is more than 250 cycles. Furthermore, Thefore, polymer memory-cell would be good candidates for nonvolatile 4F(2) cross-bar memory-cell. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1587/transele.E96.C.699 | - |
dc.identifier.scopusid | 2-s2.0-84878150603 | - |
dc.identifier.wosid | 000319085700017 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E96C, no.5, pp.699 - 701 | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E96C | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 699 | - |
dc.citation.endPage | 701 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | nonvolatile | - |
dc.subject.keywordAuthor | polymer | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | Ni | - |
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