Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
DC Field | Value | Language |
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dc.contributor.author | No, Young Soo | - |
dc.contributor.author | Park, Dong-Hee | - |
dc.contributor.author | Lee, Jeon-Kook | - |
dc.contributor.author | Lee, Youn-Seoung | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Choi, Won-Kook | - |
dc.date.accessioned | 2022-07-16T10:12:17Z | - |
dc.date.available | 2022-07-16T10:12:17Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162899 | - |
dc.description.abstract | The effect of electrode materials on resistance switching was evaluated on the Pt/NiO/electrode (EL) structures where the EL contacts were Pt, Al, and indium-tin-oxide (ITO). It was confirmed that ohmic Pt contact needs to induce the effective electric field for resistance switching across the NiO film. For the Pt/NiO/Al structure, the barrier height of the Al Schottky contact was measured as 0.66 eV and no resistance switching was observed owing to a large voltage drop at the rectifying interface induced by the reduction of NiO resulting from the formation of Al oxide. In the ITO (EL)/NiO/Pt structure, the barrier height of the Schottky contact between ITO and NiO was about 0.52 eV and it did not show any resistance switching, either. Through the depth-profile study by X-ray photoelectron spectroscopy, chemical reactions at the interface ITO/NiO was identified to be not too much evolved compared with that of NiO/Al, which might due to be abundant oxygen on the ITO surface. Such Schottky barrier heights 0.52-0.66 eV were considered too high to induce a sufficient electric field in the NiO film causing the resistance switching. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.7567/JJAP.52.051102 | - |
dc.identifier.scopusid | 2-s2.0-84880905686 | - |
dc.identifier.wosid | 000319993800009 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5, pp.1 - 5 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRODE DEPENDENCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.52.051102 | - |
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