Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
- Authors
- No, Young Soo; Park, Dong-Hee; Lee, Jeon-Kook; Lee, Youn-Seoung; Kim, Tae Whan; Choi, Won-Kook
- Issue Date
- May-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 5
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162899
- DOI
- 10.7567/JJAP.52.051102
- ISSN
- 0021-4922
- Abstract
- The effect of electrode materials on resistance switching was evaluated on the Pt/NiO/electrode (EL) structures where the EL contacts were Pt, Al, and indium-tin-oxide (ITO). It was confirmed that ohmic Pt contact needs to induce the effective electric field for resistance switching across the NiO film. For the Pt/NiO/Al structure, the barrier height of the Al Schottky contact was measured as 0.66 eV and no resistance switching was observed owing to a large voltage drop at the rectifying interface induced by the reduction of NiO resulting from the formation of Al oxide. In the ITO (EL)/NiO/Pt structure, the barrier height of the Schottky contact between ITO and NiO was about 0.52 eV and it did not show any resistance switching, either. Through the depth-profile study by X-ray photoelectron spectroscopy, chemical reactions at the interface ITO/NiO was identified to be not too much evolved compared with that of NiO/Al, which might due to be abundant oxygen on the ITO surface. Such Schottky barrier heights 0.52-0.66 eV were considered too high to induce a sufficient electric field in the NiO film causing the resistance switching.
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