Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions
- Authors
- Yoo, Taehee; Khym, Sungwon; Lee, Hakjoon; Lee, Sangyeop; Lee, Sanghoon; Liu, Xinyu; Furdyna, Jacek K.; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- May-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.21, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 21
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162921
- DOI
- 10.1063/1.4807846
- ISSN
- 0003-6951
- Abstract
- Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162921)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.