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Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions
- Authors
- Yoo, Taehee; Khym, Sungwon; Lee, Hakjoon; Lee, Sangyeop; Lee, Sanghoon; Liu, Xinyu; Furdyna, Jacek K.; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- May-2013
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.102, no.21, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 102
- Number
- 21
- Start Page
- 1
- End Page
- 5
- ISSN
- 0003-6951
1077-3118
- Abstract
- Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
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