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Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions

Authors
Lee, Du-YeongShim, Tae-HunPark, Jea-Gun
Issue Date
May-2013
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.102, no.21, pp 1 - 4
Pages
4
Indexed
SCI
SCIE
SCOPUS
Journal Title
Applied Physics Letters
Volume
102
Number
21
Start Page
1
End Page
4
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162922
DOI
10.1063/1.4808084
ISSN
0003-6951
1077-3118
Abstract
We investigated how the Pt capping layer affected perpendicular magnet anisotropy in magnetic-tunnel-junctions fabricated with a Ta electrode, a lower CoFeB layer, an MgO barrier, an upper CoFeB layer, and a Pt capping electrode, which was estimated by using an anisotropy constant multiplied by the upper CoFeB layer thickness (K-u*t). The maximum K-u*t was found at an annealing temperature of 300 degrees C for an magnetic tunnel junction with an upper CoFeB layer thickness of 0.9 nm, indicating a highly textured MgO (100) barrier of 1.0 nm with none of the remaining Pt inter-diffused in the upper CoFeB layer.
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