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Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions
- Authors
- Lee, Du-Yeong; Shim, Tae-Hun; Park, Jea-Gun
- Issue Date
- May-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.21, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 21
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- We investigated how the Pt capping layer affected perpendicular magnet anisotropy in magnetic-tunnel-junctions fabricated with a Ta electrode, a lower CoFeB layer, an MgO barrier, an upper CoFeB layer, and a Pt capping electrode, which was estimated by using an anisotropy constant multiplied by the upper CoFeB layer thickness (K-u*t). The maximum K-u*t was found at an annealing temperature of 300 degrees C for an magnetic tunnel junction with an upper CoFeB layer thickness of 0.9 nm, indicating a highly textured MgO (100) barrier of 1.0 nm with none of the remaining Pt inter-diffused in the upper CoFeB layer.
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)