Influence of Alkyl Side Chain on the Crystallinity and Trap Density of States in Thiophene and Thiazole Semiconducting Copolymer Based Inkjet-Printed Field-Effect Transistors
- Authors
- Lee, Jiyoul; Chung, Jong Won; Jang, Jaeman; Kim, Do Hwan; Park, Jeong-Il; Lee, Eunkyung; Lee, Bang-Lin; Kim, Joo-Young; Jung, Ji Young; Park, Joon Seok; Koo, Bonwon; Jin, Yong Wan; Kim, Dae Hwan
- Issue Date
- Apr-2013
- Publisher
- AMER CHEMICAL SOC
- Keywords
- polymer semiconductor; field-effect transistors; inkjet-printing; X-ray diffraction; density of states
- Citation
- CHEMISTRY OF MATERIALS, v.25, no.09, pp.1927 - 1934
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 25
- Number
- 09
- Start Page
- 1927
- End Page
- 1934
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/162994
- DOI
- 10.1021/cm400592b
- ISSN
- 0897-4756
- Abstract
- The influence of alkyl side chains on the crystallinity of semiconducting copolymer films and their sub-bandgap density-of-states (DOS), the latter being closely related to the stability and the device performance of organic field-effect transistors (OFETs), is investigated Three different poly(hexathiophene-alt-bithiazole) (PFITBTz) based polymer semiconductors, with identical backbones but different side chain positions and lengths, were synthesized The crystallinity examined by grazing incidence X-ray diffraction (GIXRD) strongly depends on the number, position, and length of each type of alkyl side chain attached to the thiophene and thiazole copolymer backbones Also, the sub-bandgap trap DOS distributions were extracted by performing multiple frequency capacitance voltage (MF-CV) spectroscopy on the field effect devices. The relationship between film crystallinity and trap DOS in the field-effect transistors can be interpreted in terms of the complex interplay between the number, position, and length of each alkyl side chain for efficient pi-pi stacking. In particular, the number and position of the alkyl side chain attached to the polymer backbone significantly affects the device performance. Poly(tetryloctylhexathiophene-alt-dioctylbithiazole) (PHTBTz-C8) exhibits the best electrical performance among the different semiconductors synthesized, with a relatively low bulk trap density of similar to 2.0 x 10(20) cm(-2) eV(-1) as well as reasonable hole mobility of similar to 0.25 cm(2) s(-1). The microstructural analyses of this organic material strongly suggest that the short pi-pi stacking distance induces strong interaction between adjacent polymer backbones, which in turn results in enhanced electrical properties.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 화학공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.