Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer

Abstract

Thin-film transistors (TFTs) utilizing TiO2 channel layers were fabricated by using a solution process. Atomic force microscopy images showed that the surface morphology of the TiO2 films became uniform due to the ultraviolet (UV)/ozone treatment. X-ray photoelectron spectroscopy showed that the UV/ozone treatment reduced the amount of oxygen deficiency in the TiO2 films, resulting in a decrease of the electron concentration on the surface. The performance of the TFT devices was significantly improved due to a decrease of the off-current level resulting from the enhanced uniformity and the decrease of the trap level resulting from the UV/ozone treatment.