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Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer
- Authors
- Chong, Ho Yong; Kim, Tae Whan
- Issue Date
- Mar-2013
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Thin-film transistor; TiO2 channel layer; structural properties; electrical characteristics
- Citation
- Journal of Electronic Materials, v.42, no.3, pp 398 - 402
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of Electronic Materials
- Volume
- 42
- Number
- 3
- Start Page
- 398
- End Page
- 402
- ISSN
- 0361-5235
1543-186X
- Abstract
- Thin-film transistors (TFTs) utilizing TiO2 channel layers were fabricated by using a solution process. Atomic force microscopy images showed that the surface morphology of the TiO2 films became uniform due to the ultraviolet (UV)/ozone treatment. X-ray photoelectron spectroscopy showed that the UV/ozone treatment reduced the amount of oxygen deficiency in the TiO2 films, resulting in a decrease of the electron concentration on the surface. The performance of the TFT devices was significantly improved due to a decrease of the off-current level resulting from the enhanced uniformity and the decrease of the trap level resulting from the UV/ozone treatment.
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