Compact Decoder-Type Gate Driver Circuits with Hydrogenated Amorphous Silicon Thin Film Transistors for Active Matrix Displays
DC Field | Value | Language |
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dc.contributor.author | Kim, Jong Seok | - |
dc.contributor.author | Park, Gyu-Tae | - |
dc.contributor.author | Kim, Hyun-Woo | - |
dc.contributor.author | Choi, Byong-Deok | - |
dc.date.accessioned | 2022-07-16T11:05:51Z | - |
dc.date.available | 2022-07-16T11:05:51Z | - |
dc.date.issued | 2013-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163313 | - |
dc.description.abstract | In this paper, we propose an integrated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) gate driver circuit with parallely connected TFTs to resolve problems of the large circuit area and large number of input signals which are founded in the previously reported decoder-type and demultiplexer-type integrated gate drivers. The proposed gate driver can alleviate the demerits of previous gate drivers while maintaining their advantages: reduction of the threshold voltage (V-th) shift of the a-Si: H TFTs with an AC-driving structure and provide a stable low-impedance output. The key idea is to construct a novel decoder based on parallely connected TFTs instead of serially connected ones that are very common for decoders. The simulation results show that the rising time and falling time are 1.27 and 1.63 mu s respectively with -5 to 30 V output voltage swing which are suitable for high resolution active-matrix displays. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Compact Decoder-Type Gate Driver Circuits with Hydrogenated Amorphous Silicon Thin Film Transistors for Active Matrix Displays | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.7567/JJAP.52.03BC01 | - |
dc.identifier.scopusid | 2-s2.0-84877263214 | - |
dc.identifier.wosid | 000321610400012 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.52, no.3, pp 1 - 5 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 52 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INSTABILITY MECHANISMS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | TIME | - |
dc.subject.keywordPlus | Amorphous silicon | - |
dc.subject.keywordPlus | Display devices | - |
dc.subject.keywordPlus | Hydrogenation | - |
dc.subject.keywordPlus | Silicon | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.52.03BC01 | - |
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