LOW VOLTAGE-LOW POWER FULL-BAND UWB RECEIVER FRONT-END
- Authors
- Lee, Ji-Young; Yun, Tae-Yeoul
- Issue Date
- Feb-2013
- Publisher
- John Wiley & Sons Inc.
- Keywords
- bulk injection; current reuse; front-end; switched biasing; ultra-wideband
- Citation
- Microwave and Optical Technology Letters, v.55, no.2, pp 278 - 281
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Microwave and Optical Technology Letters
- Volume
- 55
- Number
- 2
- Start Page
- 278
- End Page
- 281
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163486
- DOI
- 10.1002/mop.27299
- ISSN
- 0895-2477
1098-2760
- Abstract
- This article proposes a low-voltage, low-power, low-noise, wideband receiver front-end consisting of a low-noise amplifier (LNA) and a mixer. The LNA stage uses a current-reuse technique for low-power consumption and high gain. A switched biasing technique is then used to reduce the flicker noise of the mixer. A bulk injection structure is adopted for low-voltage operation of the mixer. The proposed receiver front-end achieves input impedance matching of less than -10 dB from 3.1 to 10.6 GHz, a minimum noise figure of 4.9 dB, and a maximum power gain of 17.7 dB while consuming 8.25 mW from 6.87 mA and 1.2 V. This receiver front-end is fabricated using a 0.18-mu m CMOS process.
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