Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET
DC Field | Value | Language |
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dc.contributor.author | Kim, Tae-Hyun | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T11:20:16Z | - |
dc.date.available | 2022-07-16T11:20:16Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163497 | - |
dc.description.abstract | The effect of an intermittent SiO2 strip process in multi-step oxidation on the physical properties of a condensed Ge-on-insulator (GeOI) layer was investigated to realize a higher Ge concentration. By utilizing an intermittent SiO2 strip during the condensation process, we demonstrated a 21-nm GeOI layer with a Ge concentration of higher than 95 at% and confirmed that total process time to reach a Ge concentration higher than 95 at% could be reduced by maximum of 77% compared to a conventional process without the SiO2 strip. This was attributed to the intermittent SiO2 strip process causing Ge atoms to be volatized in the O-2 environment during the condensation process. The intermittent SiO2 strip is essential to achieve a Ge concentration higher than 95 at% and is very effective in realizing a high Ge concentration and a thick Ge-on-insulator substrate. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.3938/jkps.62.531 | - |
dc.identifier.scopusid | 2-s2.0-84874332446 | - |
dc.identifier.wosid | 000315351100027 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.3, pp.531 - 535 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 62 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 531 | - |
dc.citation.endPage | 535 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001741608 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | STRAINED-SI | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | ULTRATHIN | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | SOI | - |
dc.subject.keywordAuthor | Ge | - |
dc.subject.keywordAuthor | Ge-on-insulator | - |
dc.subject.keywordAuthor | Gecondensation | - |
dc.subject.keywordAuthor | Intermittent strip | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.62.531 | - |
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