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Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, In-Sung | - |
| dc.contributor.author | Ryu, Kyoung-min | - |
| dc.contributor.author | Jeong, Jaehack | - |
| dc.contributor.author | Ahn, Jinho | - |
| dc.date.accessioned | 2022-07-16T11:44:32Z | - |
| dc.date.available | 2022-07-16T11:44:32Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2013-01 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163662 | - |
| dc.description.abstract | The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Dielectric Stacking Effect of Al2O3 and HfO2 in Metal-Insulator-Metal Capacitor | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
| dc.identifier.doi | 10.1109/LED.2012.2228162 | - |
| dc.identifier.scopusid | 2-s2.0-84871815504 | - |
| dc.identifier.wosid | 000312834200040 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.120 - 122 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 34 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 120 | - |
| dc.citation.endPage | 122 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | LAMINATE MIM CAPACITORS | - |
| dc.subject.keywordPlus | RF | - |
| dc.subject.keywordAuthor | Aluminum oxide | - |
| dc.subject.keywordAuthor | dielectric stacking | - |
| dc.subject.keywordAuthor | hafnium oxide | - |
| dc.subject.keywordAuthor | high-kappa dielectrics | - |
| dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/6384661/ | - |
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)