Effect of UV-ozone treatment on the bias-stress stability of indium-zinc-oxide thin-film transistors fabricated by using a sol-gel process
DC Field | Value | Language |
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dc.contributor.author | Chong, Ho Yong | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-16T12:18:39Z | - |
dc.date.available | 2022-07-16T12:18:39Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164022 | - |
dc.description.abstract | Thin film transistors (TFTs) with indium-zinc-oxide (IZO) channel layers were fabricated by using a solution process. The channel and the SiO2 insulator layers were exposed to ultraviolet (UV)-ozone to investigate the effect of UV-ozone treatment. The enhancement of the subthreshold slope of the UV-ozone-treated TFTs was dominantly attributed to a decrease in the defect density and an increase in the adhesion due to the ozone treatment on the SiO2 insulator layer. The positive-bias temperature stress results for the UV-ozone-treated IZO thin film showed that the threshold voltage shift and the subthreshold slope variation of the TFTs with an UV-ozone-treated IZO thin film were smaller than those with an as-deposited IZO thin film, indicative of an enhancement in the bias-stress stability. X-ray photoelectron spectroscopy spectra showed that the number of the oxygen vacancies and the number of trap sites for the as-deposited IZO film were larger than those of the UV-ozone- treated IZO film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.title | Effect of UV-ozone treatment on the bias-stress stability of indium-zinc-oxide thin-film transistors fabricated by using a sol-gel process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.36410/jcpr.2012.13.6.806 | - |
dc.identifier.scopusid | 2-s2.0-84872353648 | - |
dc.identifier.wosid | 000208908600029 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.6, pp.806 - 809 | - |
dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 13 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 806 | - |
dc.citation.endPage | 809 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002328553 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordAuthor | Indium-zinc-oxide thin-film transistors | - |
dc.subject.keywordAuthor | Bias-stress stability | - |
dc.subject.keywordAuthor | UV-ozone treatment | - |
dc.subject.keywordAuthor | Sol-gel process | - |
dc.identifier.url | https://www.kci.go.kr/kciportal/landing/article.kci?arti_id=ART002328553 | - |
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