Effect of UV-ozone treatment on the bias-stress stability of indium-zinc-oxide thin-film transistors fabricated by using a sol-gel process
- Authors
- Chong, Ho Yong; Kim, Tae Whan
- Issue Date
- Dec-2012
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- Indium-zinc-oxide thin-film transistors; Bias-stress stability; UV-ozone treatment; Sol-gel process
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.6, pp.806 - 809
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 13
- Number
- 6
- Start Page
- 806
- End Page
- 809
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164022
- DOI
- 10.36410/jcpr.2012.13.6.806
- ISSN
- 1229-9162
- Abstract
- Thin film transistors (TFTs) with indium-zinc-oxide (IZO) channel layers were fabricated by using a solution process. The channel and the SiO2 insulator layers were exposed to ultraviolet (UV)-ozone to investigate the effect of UV-ozone treatment. The enhancement of the subthreshold slope of the UV-ozone-treated TFTs was dominantly attributed to a decrease in the defect density and an increase in the adhesion due to the ozone treatment on the SiO2 insulator layer. The positive-bias temperature stress results for the UV-ozone-treated IZO thin film showed that the threshold voltage shift and the subthreshold slope variation of the TFTs with an UV-ozone-treated IZO thin film were smaller than those with an as-deposited IZO thin film, indicative of an enhancement in the bias-stress stability. X-ray photoelectron spectroscopy spectra showed that the number of the oxygen vacancies and the number of trap sites for the as-deposited IZO film were larger than those of the UV-ozone- treated IZO film.
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