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Memory stabilities and mechanisms of organic bistable devices with a phase-separated poly(methylmethacrylate)/poly(3-hexylthiophene) hybrid layer
- Issue Date
- Nov-2012
- Publisher
- ELSEVIER
- Keywords
- Organic bistable devices, P3HT; PMMA; Self-separation; Electrical bistability; Memory stability
- Citation
- ORGANIC ELECTRONICS, v.13, no.11, pp.2485 - 2488
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 13
- Number
- 11
- Start Page
- 2485
- End Page
- 2488
- ISSN
- 1566-1199
- Abstract
- Organic bistable devices (OBDs) with a poly(methylmethacrylate) (PMMA)/poly(3-hexylthiophene) (P3HT) hybrid layer, acting as a charge storage region, formed by using a vertical phase self-separation method were fabricated. The current-voltage curves of the All P3HT/PMMA/indium-tin-oxide devices exhibited current bistabilities with a maximum ON/OFF ratio of 1 x 10(4). The write-read-erase-read sequence results demonstrated the switching characteristics of the OBDs. The cycling endurance number of the ON/OFF switching for the OBD was above 1 x 10(5). The memory characteristics of the OBDs were attributed to trapping and detrapping processes of electrons into and out of the P3HT/PMMA heterointerfaces.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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