High polishing selectivity ceria slurry for formation of top electrode in spin-transfer torque magnetic random access memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cui, Hao | - |
dc.contributor.author | Lim, Jae-Hyung | - |
dc.contributor.author | Park, Jin-Hyung | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T12:58:45Z | - |
dc.date.available | 2022-07-16T12:58:45Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164315 | - |
dc.description.abstract | During the formation of the top electrode (T. E.) in spin-transfer torque magnetic random access memory, a slurry with a high polishing rate of SiO2 and a low polishing rate of metal (T. E. material) is required in the chemical mechanical planarization application area. We used a ceria-based slurry with a polymeric additive to maintain the high polishing rate of SiO2 while it suppresses the polishing rate of the T. E. material, tantalum and ruthenium. We found ruthenium showed a significantly higher selectivity than tantalum in the ceria-based slurry. X-ray photoelectron spectroscopy was used to investigate the adsorption characteristics of the polymeric additive on the T. E. material. Except for the adsorbed polymeric additive, we found that zeta potential of the T. E. material played a critical role in determining the polishing selectivity of SiO2-to-T.E. material. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | High polishing selectivity ceria slurry for formation of top electrode in spin-transfer torque magnetic random access memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1016/j.tsf.2012.09.044 | - |
dc.identifier.scopusid | 2-s2.0-84868544358 | - |
dc.identifier.wosid | 000310782000041 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.522, pp.212 - 216 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 522 | - |
dc.citation.startPage | 212 | - |
dc.citation.endPage | 216 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordAuthor | Spin-transfer torque magnetic random access memory | - |
dc.subject.keywordAuthor | Chemical mechanical polishing | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Tantalum | - |
dc.subject.keywordAuthor | Poly(acrylamide) | - |
dc.subject.keywordAuthor | Ceria | - |
dc.subject.keywordAuthor | Zeta potential | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609012011595?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.