Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization
DC Field | Value | Language |
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dc.contributor.author | Kil, Joon Pyo | - |
dc.contributor.author | Bae, Gi Yeol | - |
dc.contributor.author | Suh, Dong Ik | - |
dc.contributor.author | Park, Wanjun | - |
dc.contributor.author | Kim, Kee Won | - |
dc.contributor.author | Kim, Kwang Seok | - |
dc.date.accessioned | 2022-07-16T13:00:47Z | - |
dc.date.available | 2022-07-16T13:00:47Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164337 | - |
dc.description.abstract | Spin-transfer torque enables magnetization switching by passing a spin-polarized current through nanostructures of spin valves or magnetic tunnel junctions. In this study, current-driven switching is investigated for magnetic tunnel junctions with a CoFeB free layer having in-plane magnetization. The critical switching current is found to depend on the feature of the switching modes and on the junction geometries. Especially, long-pulse mode switching generates equilibrium remnant magnetization states before complete magnetization reversal, which results in robust switching by reducing the local magnetization anomalies. The current-driven switching can be understood by using the combined effects of spin transfer and thermal activation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Current-driven switching property of MgO-based magnetic tunnel junctions with a CoFeB free layer with in-plane magnetization | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Wanjun | - |
dc.identifier.doi | 10.3938/jkps.61.1596 | - |
dc.identifier.scopusid | 2-s2.0-84870842539 | - |
dc.identifier.wosid | 000312341100008 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1596 - 1599 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 61 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1596 | - |
dc.citation.endPage | 1599 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001717780 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SPIN-TRANSFER | - |
dc.subject.keywordPlus | PERPENDICULAR ANISOTROPY | - |
dc.subject.keywordPlus | CURRENT-DENSITY | - |
dc.subject.keywordPlus | MULTILAYERS | - |
dc.subject.keywordPlus | MRAM | - |
dc.subject.keywordAuthor | Magnetic tunnel junction | - |
dc.subject.keywordAuthor | Current-driven switching | - |
dc.subject.keywordAuthor | Spin-transfer torque | - |
dc.subject.keywordAuthor | MTJ switching | - |
dc.subject.keywordAuthor | Switching stability | - |
dc.subject.keywordAuthor | Thermal activation of magnetization switching | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.61.1596 | - |
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