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Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
- Authors
- Park, Jinsub; Yao, Takafumi
- Issue Date
- Oct-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Semiconductor; Thin films; Epitaxial growth; Atomic force microscopy
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2875 - 2878
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 2875
- End Page
- 2878
- ISSN
- 0025-5408
- Abstract
- We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)