Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphenyl-1,10-phenanthroline electron transport layer operating at low voltage
- Authors
- Lee, Kwang Seop; Kim, Dong-Hyung; Lee, Dea Uk; Kim, Tae-Won
- Issue Date
- Oct-2012
- Publisher
- Elsevier Sequoia
- Keywords
- OLED; BEDT-TTF doped BPhen ETL; Enhancement mechanism
- Citation
- Thin Solid Films, v.521, pp 193 - 196
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 521
- Start Page
- 193
- End Page
- 196
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164600
- DOI
- 10.1016/j.tsf.2011.12.011
- ISSN
- 0040-6090
- Abstract
- The electrical and optical properties of organic light-emitting devices (OLEDs) with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layers (ETLs) were investigated. The current density-voltage characteristics of the OLEDs with BEDT-TTF-doped BPhen ETLs and electron only devices with BEDT-TTF-doped BPhen layers showed that the electrons injected from the cathode were increased by inserting a BEDT-TTF-doped BPhen layer. OLEDs containing BEDT-TTF-doped BPhen layers at a doping concentration of 1 wt.% demonstrated the highest current density and luminance values. Enhancements of the electron injection and luminance as well as a decrease in the operating voltage of the OLEDs were achieved by inserting a BEDT-TTF-doped BPhen layer. (C) 2011 Elsevier B. V. All rights reserved.
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