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Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphenyl-1,10-phenanthroline electron transport layer operating at low voltage

Authors
Lee, Kwang SeopKim, Dong-HyungLee, Dea UkKim, Tae-Won
Issue Date
Oct-2012
Publisher
Elsevier Sequoia
Keywords
OLED; BEDT-TTF doped BPhen ETL; Enhancement mechanism
Citation
Thin Solid Films, v.521, pp 193 - 196
Pages
4
Indexed
SCI
SCIE
SCOPUS
Journal Title
Thin Solid Films
Volume
521
Start Page
193
End Page
196
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164600
DOI
10.1016/j.tsf.2011.12.011
ISSN
0040-6090
Abstract
The electrical and optical properties of organic light-emitting devices (OLEDs) with bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layers (ETLs) were investigated. The current density-voltage characteristics of the OLEDs with BEDT-TTF-doped BPhen ETLs and electron only devices with BEDT-TTF-doped BPhen layers showed that the electrons injected from the cathode were increased by inserting a BEDT-TTF-doped BPhen layer. OLEDs containing BEDT-TTF-doped BPhen layers at a doping concentration of 1 wt.% demonstrated the highest current density and luminance values. Enhancements of the electron injection and luminance as well as a decrease in the operating voltage of the OLEDs were achieved by inserting a BEDT-TTF-doped BPhen layer. (C) 2011 Elsevier B. V. All rights reserved.
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