Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals
- Authors
- Lee, Dong Uk; Kim, Eun Kyu; Cho, Won-Ju; Kim, Young-Ho; Im, Hyunsik
- Issue Date
- Oct-2012
- Publisher
- Elsevier Sequoia
- Keywords
- Nano-crystals; Hybrid; SnO2; Nonvolatile memory; Resistance random access memory; Polyimide
- Citation
- Thin Solid Films, v.521, pp 98 - 101
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 521
- Start Page
- 98
- End Page
- 101
- ISSN
- 0040-6090
- Abstract
- ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of +/- 4 V and +/- 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 x 10(4) at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 x 10(3) after 10(3) s.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
- 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.