Effects of Al Concentration on Microstructural Characteristics and Electrical Properties of Al-Doped ZnO Thin Films on Si Substrates by Atomic Layer Deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Ju Ho | - |
dc.contributor.author | Lee, Jae-Won | - |
dc.contributor.author | Hwang, Sooyeon | - |
dc.contributor.author | Kim, Sang Yun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.contributor.author | Lee, Jeong Yong | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T14:30:40Z | - |
dc.date.available | 2022-07-16T14:30:40Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165070 | - |
dc.description.abstract | Al-doped ZnO (AZO) thin films with various Al concentrations were synthesized on Si(001) substrates with native oxide layers by atomic layer deposition process. The effects of the Al concentration on the microstructural characteristics of the AZO thin films grown at 250 degrees C and the correlation between their microstructural characteristics and electrical properties of the AZO thin films were investigated by AFM, XRD, HRTEM and Hall measurements. The XRD and HRTEM results revealed that the crystallinity and electrical properties of the undoped ZnO thin films were enhanced by 2.48 at% Al doping. However, 12.62 at% Al doping induced the deterioration of their crystallinity and electrical properties due to the formation of nano-sized metallic Al clusters and randomly oriented ZnO-based nano-crystals. To enhance the electrical properties of the AZO thin films while maintaining their crystallinity and electrical properties, a moderate Al concentration has to be chosen under the solubility limit of Al in ZnO. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effects of Al Concentration on Microstructural Characteristics and Electrical Properties of Al-Doped ZnO Thin Films on Si Substrates by Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1166/jnn.2012.6277 | - |
dc.identifier.scopusid | 2-s2.0-84865108022 | - |
dc.identifier.wosid | 000307604700086 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5598 - 5603 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 5598 | - |
dc.citation.endPage | 5603 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Microstructure | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Transmission electron microscopy | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | AFM | - |
dc.subject.keywordPlus | Al-concentration | - |
dc.subject.keywordPlus | Al-doped ZnO | - |
dc.subject.keywordPlus | Al-doping | - |
dc.subject.keywordPlus | AlZnO | - |
dc.subject.keywordPlus | Atomic layer | - |
dc.subject.keywordPlus | Crystallinities | - |
dc.subject.keywordPlus | Hall measurements | - |
dc.subject.keywordPlus | Microstructural characteristics | - |
dc.subject.keywordPlus | Nano-sized | - |
dc.subject.keywordPlus | Native oxide layer | - |
dc.subject.keywordPlus | Si (001) substrate | - |
dc.subject.keywordPlus | Si substrates | - |
dc.subject.keywordPlus | Solubility limits | - |
dc.subject.keywordPlus | XRD | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | AlZnO | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Transmission Electron Microscopy | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000007/art00086;jsessionid=84m3s9fuff498.x-ic-live-01 | - |
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