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Storage Mechanisms of Polyimide-Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write-Once-Read-Many-Times Memristive Devices
- Authors
- An, Haoqun; Ge, Yang; Li, Mingjun; KIM, TAE WHAN
- Issue Date
- Jan-2021
- Publisher
- WILEY
- Keywords
- electrical characteristics; high thermal stability; memristive devices; MoS; (2) quantum dots; quantum confinement effect
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.7, no.1, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 7
- Number
- 1
- Start Page
- 1
- End Page
- 8
- ISSN
- 2199-160X
- Abstract
- In this paper two-terminal memristive devices are presented with a structure of aluminum/polyimide-molybdenumdisulfide quantum dot (QD) nanocomposite/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/indium tin oxide that exhibits the characteristics of write-once-read-many times in the range of applied voltages from -6 to 3 V. The operating voltage of the device is as low as 1.4 V, and the ON/OFF ratio of 3 x 10(3) can be maintained for retention times larger than 3 x 10(4) s. No significant variation in the current-voltage (I-V) curves of the devices is observed under high annealing temperatures of 50, 100, and 200 degrees C, which is indicative of their excellent thermal stability. The conduction mechanisms of the devices in their high and low resistance states are described by fitting the I-V curves of the devices.
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