Printability and inspectability of defects on EUV blank for 2xnm HP HVM application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huh, Sungmin | - |
dc.contributor.author | Kang, In-Yong | - |
dc.contributor.author | Jeong, Chang Young | - |
dc.contributor.author | Na, Jihoon | - |
dc.contributor.author | Lee, Dong Ryul | - |
dc.contributor.author | Seo, Hwan-seok | - |
dc.contributor.author | Kim, Seong-Sue | - |
dc.contributor.author | Jeon, Chan-Uk | - |
dc.contributor.author | Doh, Jonggul | - |
dc.contributor.author | Inderhees, Gregg | - |
dc.contributor.author | Ahn, Jin ho | - |
dc.date.accessioned | 2022-07-16T16:36:06Z | - |
dc.date.available | 2022-07-16T16:36:06Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166190 | - |
dc.description.abstract | The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their M1350s. In this paper, a full field EUV mask with Teron 61X blank inspection is fabricated to see the printability of various defects on the blank using NXE 3100. Minimum printable blank defect size is 23nm in SEVD using real blank defect. Current defect level on blank with Teron 61X Phasur has been up to 70 in 132 X 132mm2. More defect reduction as well as advanced blank inspection tools to capture all printable defects should be prepared for HVM. 3.6X reduction of blank defects per year is required to achieve the requirement of HVM in the application of memory device with EUVL. Furthermore, blank defect mitigation and compensational repair techniques during mask process needs to be developed to achieve printable defect free on the wafer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPIE | - |
dc.title | Printability and inspectability of defects on EUV blank for 2xnm HP HVM application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jin ho | - |
dc.identifier.doi | 10.1117/12.916021 | - |
dc.identifier.scopusid | 2-s2.0-84861515804 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.8322 | - |
dc.relation.isPartOf | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 8322 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Defect free mask | - |
dc.subject.keywordPlus | Defect levels | - |
dc.subject.keywordPlus | Defect reduction | - |
dc.subject.keywordPlus | Defect size | - |
dc.subject.keywordPlus | Defect-free | - |
dc.subject.keywordPlus | EUV | - |
dc.subject.keywordPlus | EUV blank | - |
dc.subject.keywordPlus | EUV mask | - |
dc.subject.keywordPlus | Extreme Ultraviolet | - |
dc.subject.keywordPlus | Fiducial mark | - |
dc.subject.keywordPlus | Full-field | - |
dc.subject.keywordPlus | High volume manufacturing | - |
dc.subject.keywordPlus | Inspection tools | - |
dc.subject.keywordPlus | Mask inspection | - |
dc.subject.keywordPlus | Mask process | - |
dc.subject.keywordPlus | Repair techniques | - |
dc.subject.keywordPlus | Extreme ultraviolet lithography | - |
dc.subject.keywordPlus | Inspection | - |
dc.subject.keywordPlus | Masks | - |
dc.subject.keywordPlus | Defects | - |
dc.subject.keywordAuthor | Blank defect | - |
dc.subject.keywordAuthor | Blank inspection | - |
dc.subject.keywordAuthor | EUV | - |
dc.subject.keywordAuthor | Fiducial mark | - |
dc.subject.keywordAuthor | Mask | - |
dc.subject.keywordAuthor | Mask inspection | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/8322/1/Printability-and-inspectability-of-defects-on-EUV-blank-for-2xnm/10.1117/12.916021.short | - |
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