Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
DC Field | Value | Language |
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dc.contributor.author | Park, Jiwoong | - |
dc.contributor.author | Lee, Hea Joeng | - |
dc.contributor.author | Lee, Seog Woo | - |
dc.contributor.author | Ha, Jun-Seok | - |
dc.contributor.author | Nagata, Shinji | - |
dc.contributor.author | Hong, S. -K. | - |
dc.contributor.author | Lee, Hak Young | - |
dc.contributor.author | Cho, Meung-Whan | - |
dc.contributor.author | Yao, Takafumi | - |
dc.date.accessioned | 2022-07-16T16:45:45Z | - |
dc.date.available | 2022-07-16T16:45:45Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166319 | - |
dc.description.abstract | A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the < 111 > axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jiwoong | - |
dc.identifier.doi | 10.1149/2.014205esl | - |
dc.identifier.scopusid | 2-s2.0-84860161789 | - |
dc.identifier.wosid | 000301656700020 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.H148 - H152 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | H148 | - |
dc.citation.endPage | H152 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.014205esl | - |
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