Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
- Authors
- Park, Jiwoong; Lee, Hea Joeng; Lee, Seog Woo; Ha, Jun-Seok; Nagata, Shinji; Hong, S. -K.; Lee, Hak Young; Cho, Meung-Whan; Yao, Takafumi
- Issue Date
- Feb-2012
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.H148 - H152
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 15
- Number
- 5
- Start Page
- H148
- End Page
- H152
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166319
- DOI
- 10.1149/2.014205esl
- ISSN
- 1099-0062
- Abstract
- A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the < 111 > axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC.
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