Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods
- Authors
- Kim, Min Hwa; Chung, Kunook; Moon, Dae Young; Jeon, Jong-Myeong; Kim, Miyoung; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon
- Issue Date
- Feb-2012
- Publisher
- American Scientific Publishers
- Keywords
- InN Nanorod; Catalyst-Free; Metal-Organic Chemical Vapor Deposition (MOCVD)
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.2, pp 1645 - 1648
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of Nanoscience and Nanotechnology
- Volume
- 12
- Number
- 2
- Start Page
- 1645
- End Page
- 1648
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166338
- DOI
- 10.1166/jnn.2012.4698
- ISSN
- 1533-4880
1533-4899
- Abstract
- We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of similar to 3.5 mu m were grown with hexagonal facets. theta-2 theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along < 0001 > with (10-10) facets.
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