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Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

Authors
Kim, Min HwaChung, KunookMoon, Dae YoungJeon, Jong-MyeongKim, MiyoungPark, JinsubNanishi, YasushiYi, Gyu-ChulYoon, Euijoon
Issue Date
Feb-2012
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
InN Nanorod; Catalyst-Free; Metal-Organic Chemical Vapor Deposition (MOCVD)
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.2, pp.1645 - 1648
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
12
Number
2
Start Page
1645
End Page
1648
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166338
DOI
10.1166/jnn.2012.4698
ISSN
1533-4880
Abstract
We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of similar to 3.5 mu m were grown with hexagonal facets. theta-2 theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along < 0001 > with (10-10) facets.
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