A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Yong-Sik | - |
dc.contributor.author | Kil, Gyu-Hyun | - |
dc.contributor.author | Song, Yun-Heub | - |
dc.date.accessioned | 2022-07-16T16:52:20Z | - |
dc.date.available | 2022-07-16T16:52:20Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166389 | - |
dc.description.abstract | A novel sensing algorithm for non-volatile Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) is presented. The dynamic reference sense amplifier (DRSA) improves sensing margin to achieve high reliability and sensitivity by increasing the difference of input voltages of sense amplifier. A dynamic reference sensing algorithm is proposed as a solution for the read margin loss due to variation in magnetic tunneling junction (MTJ) parameters of the STT-MRAM. The proposed sensing method was designed in standard 0.18 um process parameters, and simulation results indicate simultaneously increased the read margin compared with the conventional sensing method. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun-Heub | - |
dc.identifier.doi | 10.1587/elex.9.153 | - |
dc.identifier.scopusid | 2-s2.0-84863132364 | - |
dc.identifier.wosid | 000303250300007 | - |
dc.identifier.bibliographicCitation | IEICE ELECTRONICS EXPRESS, v.9, no.3, pp.153 - 159 | - |
dc.relation.isPartOf | IEICE ELECTRONICS EXPRESS | - |
dc.citation.title | IEICE ELECTRONICS EXPRESS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 153 | - |
dc.citation.endPage | 159 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Algorithms | - |
dc.subject.keywordPlus | Magnetos | - |
dc.subject.keywordAuthor | Spin-Transfer-Torque magneto resistive RAM (STT-MRAM) | - |
dc.subject.keywordAuthor | sense amplifier | - |
dc.subject.keywordAuthor | dynamic reference | - |
dc.subject.keywordAuthor | read margin | - |
dc.identifier.url | https://www.jstage.jst.go.jp/article/elex/9/3/9_3_153/_article | - |
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