Gadolinium nitride films deposited using a PEALD based process
DC Field | Value | Language |
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dc.contributor.author | Fang, Ziwen | - |
dc.contributor.author | Williams, Paul A. | - |
dc.contributor.author | Odedra, Rajesh | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Potter, Richard J. | - |
dc.date.accessioned | 2022-07-16T17:07:35Z | - |
dc.date.available | 2022-07-16T17:07:35Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166538 | - |
dc.description.abstract | Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp)(3)} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 degrees C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (similar to 5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp)3, it was still possible to obtain smooth (Ra.=similar to 0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Gadolinium nitride films deposited using a PEALD based process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.10.049 | - |
dc.identifier.scopusid | 2-s2.0-84655167687 | - |
dc.identifier.wosid | 000299720400021 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.338, no.1, pp.111 - 117 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 338 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 111 | - |
dc.citation.endPage | 117 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TAN | - |
dc.subject.keywordPlus | TDMAT | - |
dc.subject.keywordPlus | GDN | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordAuthor | Auger electron spectroscopy | - |
dc.subject.keywordAuthor | Medium energy ion scattering | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Gadolinium compounds | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Magnetic materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024811009067?via%3Dihub | - |
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