Study on transparent and flexible memory with metal-oxide nanocrystals
- Authors
- Lee, Dong Uk; Kim, Seon Pil; Lee, Hyo Jun; Han, Dong Seok; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju; Kim, Young Ho
- Issue Date
- Dec-2011
- Publisher
- AIP
- Citation
- AIP Conference Proceedings, v.1399, pp.869 - 870
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1399
- Start Page
- 869
- End Page
- 870
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166888
- DOI
- 10.1063/1.3666652
- ISSN
- 0094-243X
- Abstract
- A memory device with the In 2O 3 nanocrystals embedded in biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer was fabricated, and its electrical and optical properties were evaluated. The In 2O 3 nanocrystals showed an irregular spherical shape with the average size and density of about 7 nm and 6×10 11cm -2, respectively. In the structure of BPDA-PDA polyimide/In 2O 3 nanocrystals/ZnO/ITO/sapphire, a current bistability by difference resistance appeared in the sweep voltage rage from -7 V to 7 V. Then, the transmittance efficiency of this was measured about 80 % between 440 nm to 800 nm by the ultraviolet-visible transmittance spectra.
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