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The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, Youngbin | - |
| dc.contributor.author | Bang, Seokhwan | - |
| dc.contributor.author | Lee, Seungjun | - |
| dc.contributor.author | Park, Soyeon | - |
| dc.contributor.author | Park, Joohyun | - |
| dc.contributor.author | Jeon, Hyeongtag | - |
| dc.date.accessioned | 2022-07-16T18:23:04Z | - |
| dc.date.available | 2022-07-16T18:23:04Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2011-11 | - |
| dc.identifier.issn | 1862-6254 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167238 | - |
| dc.description.abstract | In this study, the effects of a HfO2 buffer layer between an Al2O3 passivation layer and an indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) were investigated to enhance the environmental stability and electrical properties of the IGZO TFT. When applying the HfO2 buffer layer, the formation of HfAlxOy at the Al2O3/HfO2 interface reduces the water vapor transmission rate (WVTR) due to densification of the passivation layer. Consequently, by adding the HfO2 buffer layer, WVTR of the TFT was highly improved; moreover, changes in the electrical characteristics can be prevented compared to both the non-passivated and Al2O3-passivated TFTs. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
| dc.identifier.doi | 10.1002/pssr.201105340 | - |
| dc.identifier.scopusid | 2-s2.0-80155156937 | - |
| dc.identifier.wosid | 000297747600016 | - |
| dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.5, no.10-11, pp.403 - 405 | - |
| dc.relation.isPartOf | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
| dc.citation.title | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 10-11 | - |
| dc.citation.startPage | 403 | - |
| dc.citation.endPage | 405 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordPlus | AL2O3 | - |
| dc.subject.keywordPlus | HYDROGEN | - |
| dc.subject.keywordPlus | PLASMA | - |
| dc.subject.keywordAuthor | atomic layer deposition | - |
| dc.subject.keywordAuthor | thin film transistors | - |
| dc.subject.keywordAuthor | passivation | - |
| dc.subject.keywordAuthor | IGZO | - |
| dc.subject.keywordAuthor | HfO2 | - |
| dc.subject.keywordAuthor | Al2O3 | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssr.201105340 | - |
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)