Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime
- Authors
- Kim, Byung-Hyun; Pamungkas, Mauludi Ariesto; Park, Mina; Kim, Gyubong; Lee, Kwang-Ryeol; Chung, Yong-Chae
- Issue Date
- Oct-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- compressive strength; deformation; elemental semiconductors; internal stresses; molecular dynamics method; nanowires; oxidation; shear modulus; silicon
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.14, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 99
- Number
- 14
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167513
- DOI
- 10.1063/1.3643038
- ISSN
- 0003-6951
- Abstract
- Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs.
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