The effect of surface treatment of bottom contact organic thin film transistor
DC Field | Value | Language |
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dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Jeon, Woo Sik | - |
dc.contributor.author | Park, Jung Soo | - |
dc.contributor.author | Kwon, Jang Hyuk | - |
dc.contributor.author | Suh, Min Chul | - |
dc.date.accessioned | 2022-07-16T19:01:51Z | - |
dc.date.available | 2022-07-16T19:01:51Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167568 | - |
dc.description.abstract | A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (Cl) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D. Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (I(on)), although a bottom contact structure was exploited. The lack of increase in the contact resistance (R(c)) may be due to the difference in wettability between PMMA/Au and PMMA/organic Cl. As a result, the devices treated with PMMA -˃ MNB showed much better I(on) behavior than those fabricated with MNB -˃ PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | The effect of surface treatment of bottom contact organic thin film transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.synthmet.2011.07.001 | - |
dc.identifier.scopusid | 2-s2.0-80052266448 | - |
dc.identifier.wosid | 000295564000025 | - |
dc.identifier.bibliographicCitation | SYNTHETIC METALS, v.161, no.17-18, pp.1953 - 1957 | - |
dc.relation.isPartOf | SYNTHETIC METALS | - |
dc.citation.title | SYNTHETIC METALS | - |
dc.citation.volume | 161 | - |
dc.citation.number | 17-18 | - |
dc.citation.startPage | 1953 | - |
dc.citation.endPage | 1957 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Polymer Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalWebOfScienceCategory | Polymer Science | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | SHIFT | - |
dc.subject.keywordAuthor | Organic thin film transistor (OTFT) | - |
dc.subject.keywordAuthor | PMMA | - |
dc.subject.keywordAuthor | MNB | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Sequence of surface treatment | - |
dc.subject.keywordAuthor | Wettability | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0379677911002931?via%3Dihub | - |
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