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High T-g cyclic olefin copolymer/Al2O3 bilayer gate dielectrics for flexible organic complementary circuits with low-voltage and air-stable operationopen access

Authors
Jang, JaeyoungNam, SoojiYun, Won MinYang, ChanwooHwang, JihunAn, Tae KyuChung, Dae SungPark, Chan Eon
Issue Date
Sep-2011
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.21, no.33, pp.12542 - 12546
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY
Volume
21
Number
33
Start Page
12542
End Page
12546
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167575
DOI
10.1039/c1jm11544h
ISSN
0959-9428
Abstract
Here we present solution-processed ultrathin cyclic olefin copolymer (COC)/Al2O3 bilayer gate dielectrics for low-voltage and flexible N, N'-ditridecyl perylene diimide (PTCDI-C13)-based n-type organic field-effect transistors (OFETs) and their complementary circuits. The PTCDI-C13 thin films grown on the COC/Al2O3 bilayer gate dielectrics formed large and flat grains with thermal treatment, resulting in high OFET performance, and stability in an ambient air atmosphere. Despite the high glass transition temperature of the COC, the COC thin films showed good mechanical flexibility with the application of bending strain, and OFETs with bilayer gate dielectrics showed stable operation up to a strain of 1.0%. Complementary inverters based on the PTCDI-C13 and pentacene OFETs with bilayer dielectrics functioned at a low voltage of 5 V, and exhibited a high gain of 63.
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