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Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS2/ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites

Authors
Shim, Jae HoJung, Jae HunLee, Min HoKim, Tae WhanSon, Dong IckHan, An NaKim, Sang Wook
Issue Date
Sep-2011
Publisher
ELSEVIER
Keywords
Organic bistable devices; CuInS2/ZnS core-shell quantum dots; Poly(N-vinylcarbazole)
Citation
ORGANIC ELECTRONICS, v.12, no.9, pp.1566 - 1570
Indexed
SCIE
SCOPUS
Journal Title
ORGANIC ELECTRONICS
Volume
12
Number
9
Start Page
1566
End Page
1570
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167650
DOI
10.1016/j.orgel.2011.05.023
ISSN
1566-1199
Abstract
Organic bistable devices (OBDs) fabricated utilizing CuInS2 (CIS)/ZnS core-shell-type quantum dots (QDs) blended with a poly(N-vinylcarbazole) (PVK) layer were fabricated on polyethylene terephthalate (PET) substrates by using a spin-coating technique. Transmission electron microscopy images revealed that the CIS/ZnS QDs were distributed over the surface of the PVK layer. Current-voltage (I-V) curves for the Al/PVK + [CIS/ZnS QDs]/ITO/PET devices at 300 K showed that the maximum ON/OFF ratio of the current bistability for the OBDs was as large as 3.9 x 10(4). Memory mechanisms for the OBDs fabricated on PET substrates are described on the basis of the I-V results.
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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