Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS2/ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites
- Authors
- Shim, Jae Ho; Jung, Jae Hun; Lee, Min Ho; Kim, Tae Whan; Son, Dong Ick; Han, An Na; Kim, Sang Wook
- Issue Date
- Sep-2011
- Publisher
- ELSEVIER
- Keywords
- Organic bistable devices; CuInS2/ZnS core-shell quantum dots; Poly(N-vinylcarbazole)
- Citation
- ORGANIC ELECTRONICS, v.12, no.9, pp.1566 - 1570
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 12
- Number
- 9
- Start Page
- 1566
- End Page
- 1570
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167650
- DOI
- 10.1016/j.orgel.2011.05.023
- ISSN
- 1566-1199
- Abstract
- Organic bistable devices (OBDs) fabricated utilizing CuInS2 (CIS)/ZnS core-shell-type quantum dots (QDs) blended with a poly(N-vinylcarbazole) (PVK) layer were fabricated on polyethylene terephthalate (PET) substrates by using a spin-coating technique. Transmission electron microscopy images revealed that the CIS/ZnS QDs were distributed over the surface of the PVK layer. Current-voltage (I-V) curves for the Al/PVK + [CIS/ZnS QDs]/ITO/PET devices at 300 K showed that the maximum ON/OFF ratio of the current bistability for the OBDs was as large as 3.9 x 10(4). Memory mechanisms for the OBDs fabricated on PET substrates are described on the basis of the I-V results.
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