Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Gae-Hun | - |
dc.contributor.author | Lee, Jung-Min | - |
dc.contributor.author | Song, Yun Heub | - |
dc.contributor.author | Bea, Ji Chel | - |
dc.contributor.author | Tanaka, Tetsu | - |
dc.contributor.author | Koyanagi, Mitsumasa | - |
dc.date.accessioned | 2022-07-16T19:11:25Z | - |
dc.date.available | 2022-07-16T19:11:25Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167666 | - |
dc.description.abstract | A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler-Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Multilevel Charge Storage in a Multiple Alloy Nanodot Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1143/JJAP.50.095001 | - |
dc.identifier.scopusid | 2-s2.0-80053004252 | - |
dc.identifier.wosid | 000295029200036 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.9, pp.1 - 3 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OXIDE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.50.095001 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.