Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
- Authors
- Lee, Gae-Hun; Lee, Jung-Min; Song, Yun Heub; Bea, Ji Chel; Tanaka, Tetsu; Koyanagi, Mitsumasa
- Issue Date
- Sep-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.9, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 50
- Number
- 9
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167666
- DOI
- 10.1143/JJAP.50.095001
- ISSN
- 0021-4922
- Abstract
- A multilevel charge storage in a multiple FePt alloy nanodot memory is investigated for the first time. It is demonstrated that the memory structure with multiple FePt nanodot layers effectively realizes a multilevel state by the adjustment of gate voltage. Metal oxide semiconductor (MOS) capacitors with four FePt nanodot layers as a floating gate are fabricated to evaluate the multilevel cell characteristic and reliability. Here, the effect of memory window for a nanodot diameter is also investigated, and it is found that a smaller dot size gives a larger window. From the results showing good endurance and retention characteristics for the multilevel states, it is expected that a multiple FePt nanodot memory using Fowler-Nordheim (FN) tunneling can be a candidate structure for the future multilevel NAND flash memory.
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