Effects of interfacial layer-by-layer nanolayers on the stability of the Cu TSV:Diffusion barrier, adhesion, conformal coating, and mechanical property
- Authors
- Jeong, Daekyun; Abdur, Rahim; Joo, Young-Chang; Jang, Jae-il; Cha, Pil Ryung; Kim, Jiyoung; Min, Kyeong-Sik; Lee, Jaegab
- Issue Date
- Aug-2018
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Through-Silicon Via (TSV); Layer-by-layer (LbL); Poly(allylamine) hydrochloride (PAH)/; polystyrene sulfonate (PSS); Nano indentation; Stress reduction; Conformal coating
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.83, pp.33 - 41
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 83
- Start Page
- 33
- End Page
- 41
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/16786
- DOI
- 10.1016/j.mssp.2018.04.008
- ISSN
- 1369-8001
- Abstract
- The Through-Silicon (Si) Via (TSV) is the integration technology for three-dimensional integrated-circuit packaging. The layer-by-layer (LbL) technique has been used to deposit flexible poly(allylamine) hydrochloride (PAH)/polystyrene sulfonate (PSS) multilayers inside scalloped Si trenches of a high aspect ratio, fabricated by the Bosch-etching process. An outstanding control of the thickness and the conformality of the polymer layers, along with a significantly improved planarization, was achieved due to the LbL-technique self-termination effects. In addition, the basic properties of the polymer layers have been characterized: diffusion-barrier properties, adhesion, density, and elastic modulus. The results of this study demonstrate the feasibility of LbL multilayers regarding the TSV liner for the vertical interconnect accesses with a high aspect ratio of highly scalloped surface walls.
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