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Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
- Authors
- Yang, Changjae; Lee, Sangsoo; Shin, Keun Wook; Oh, Sewoung; Park, Jinsub; Kim, Chang-Zoo; Park, Won-Kyu; Ha, Seung-Kyu; Choi, Won Jun; Yoon, Euijoon
- Issue Date
- Aug-2011
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.99, no.9, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 99
- Number
- 9
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
1077-3118
- Abstract
- Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor-acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)