Post Annealing Effect on the Electrical Properties of Top-Gate SWNT Network Transistors

Abstract

High performance top-gate single walled carbon nanotube network transistors are fabricated with aluminum oxide (Al(2)O(3)) layer as a gate dielectric by atomic layer deposition. It exhibits large on/off ratio (>10(4)) due to selective growth of semiconducting tubes by the plasma enhanced chemical vapor deposition. I-V characteristics show p-type or n-type depending on the deposition temperature. We investigate the type dependent characteristics for the carrier polarities with the post annealing effect on the top-gate SWNT network transistors. The dramatic change in the polarity of the top-gate SWNT network transistors, from n-type to p-type due to conversion of I-V characteristics is observed by post-annealing at 350 degrees C for 30 minutes under vacuum. Our observation suggests that competition between electron transfer from the Al(2)O(3) layers to the SWNT surface and electron capture by oxygen molecules adsorbed on the tube walls seems to be the key point for the V(th) change as a function of Al(2)O(3) deposition temperature.