Properties of (11-20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy
- Authors
- Han, Seok Kyu; Hong, Soon-Ku; Lee, Jae Wook; Kim, Jae Goo; Jeong, Myoungho; Lee, Jeong Yong; Hong, Sun Ig; Park, Jin Sub; Ihm, Young Eon; Ha, Jun-Seok; Yao, Takafumi
- Issue Date
- Jul-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Molecular beam epitaxy; Thin film; Epitaxy; Zinc oxide; Nonpolar; Semiconductor
- Citation
- THIN SOLID FILMS, v.519, no.19, pp.6394 - 6398
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 19
- Start Page
- 6394
- End Page
- 6398
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168105
- DOI
- 10.1016/j.tsf.2011.04.093
- ISSN
- 0040-6090
- Abstract
- The effects of growth temperatures (in a wide range from 100 to 800 degrees C) on properties of a-plane (11 (2) over bar0) ZnO films grown on r-plane (1 (1) over bar 02) sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. The film was grown as polycrystalline at 100 degrees C, but grown as single crystalline at the temperatures from 200 to 800 degrees C without any mixture of c-plane (0001) ZnO and m-plane (10 (1) over bar0) ZnO. The single crystalline ZnO films showed anisotropic surface morphology with the conglomerated granules or striations along the [0001](ZnO) direction. The ZnO film grown at 400 degrees C showed better crystal quality than others. It showed the smallest full width at half maximums of 0.450 degrees and 0.297 degrees for (11 (2) over bar0) x-ray omega rocking curves under the measuring configuration with the omega axis parallel and perpendicular to the < 0001 >(ZnO) and directions, respectively, and 0.387 degrees for (10 (1) over bar1) omega rocking curve. The threading dislocation and the stacking fault densities were determined to be similar to 3.7 x 10(10) cm(-2) and similar to 8.5 x 10(4) cm(-1) for the ZnO film grown at 400 degrees C.
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