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Interpenetrating Polymer Semiconductor Nanonetwork Channel for Ultrasensitive, Selective, and Fast Recovered Chemodetection

Authors
Kim, JaeheeKweon, HyukminPark, Han WoolGo, PureunsanHwang, HaejungLee, JoonseokChoi, Seon-JinKim, Do Hwan
Issue Date
Dec-2020
Publisher
AMER CHEMICAL SOC
Keywords
interpenetrating polymer semiconductor nanonetwork channel; chemodetection; amine receptor; ultrasensitivity and high selectivity; fast recovery
Citation
ACS APPLIED MATERIALS & INTERFACES, v.12, no.49, pp.55107 - 55115
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
12
Number
49
Start Page
55107
End Page
55115
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1684
DOI
10.1021/acsami.0c18549
ISSN
1944-8244
Abstract
Organic semiconductor (OSC)-based gas detection has attracted considerable attention due to the facile manufacturing process and effective contact with target chemicals at room temperature. However, OSCs intrinsically suffer from inferior sensing and recovery capability due to lack of functional sites and deep gas penetration into the film. Here, we describe an interpenetrating polymer semiconductor nanonetwork (IPSN channel possessing unreacted silanol (Si-OH) groups on its surface to overcome bottlenecks that come from OSC-based chemodetection. On the top of the IPSN, moreover, we introduced electron-donating amine (NH2) groups as a chemical receptor because they strongly interact with the electron-withdrawing nature of NO2 gas. The NH2-IPSN-based field-effect transistor exhibited high-performance chemodetection such as ultrasensitivity (990% ppm(-1) at 5 ppm) and excellent NO2 selectivity against other toxic gases. Impressively, the gas recovery was significantly improved because the NH2 chemical receptors anchored on the surface of the IPSN suppress deep gas penetration into the film. This work demonstrates that our NO2 chemodetection is expected to provide inspiration and guideline for realization of practical gas sensors in various industries and daily life.
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